Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs

(2014) T. Narita et al.   ELECTRONICS LETTERS

High-$f_\rm MAX$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_\rm x$ Passivation

(2014) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

(2013) Milan Ťapajna et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

(2012) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

(2012) Casey J. Kirkpatrick et al.   IEEE ELECTRON DEVICE LETTERS

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

(2012) Fatima Husna et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric

(2010) Sarbani Basu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study

(2010) Y. Hayashi et al.   SOLID-STATE ELECTRONICS

AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $ \hbox{TiO}_{2}$ as Gate Dielectric

(2009) Tsu-Yi Wu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS