AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3 Structure

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Title
AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3 Structure
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 8, Pages 3768-3774
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-06-29
DOI
10.1109/ted.2021.3090343

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