Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

(2010) Dawei Yan et al.   APPLIED PHYSICS LETTERS

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

(2010) W. Chikhaoui et al.   APPLIED PHYSICS LETTERS

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

(2009) Engin Arslan et al.   APPLIED PHYSICS LETTERS

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

(2009) N. Sarazin et al.   IEEE ELECTRON DEVICE LETTERS

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures

(2009) Engin Arslan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY