Electroluminescence study of InGaN/GaN QW based p-i-n and inverted p-i-n junction based short-wavelength LED device using laser MBE technique

Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness

(2022) Huan Xu et al.   Crystals

Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K

(2020) Sai Pan et al.   Applied Sciences-Basel

Room temperature electroluminescence from Laser MBE grown Gallium nitride LEDs

(2020) Sheetal Dewan et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film

(2019) Xiao-long Hu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Tunable electronic and optical properties of new two-dimensional GaN/BAs van der Waals heterostructures with the potential for photovoltaic applications

(2019) Ali A. Attia et al.   CHEMICAL PHYSICS LETTERS

Intensive measures of luminescence in GaN/InGaN heterostructures

(2019) Jui-Ju Hsiao et al.   PLoS One

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

(2018) P. Prajoon et al.   SUPERLATTICES AND MICROSTRUCTURES

Surface plasmon resonance aided analysis of quantum wells for photonic device applications

(2018) Sheetal Dewan et al.   MATERIALS & DESIGN

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

(2018) George Christian et al.   Materials

How To Correctly Determine the Band Gap Energy of Modified Semiconductor Photocatalysts Based on UV–Vis Spectra

(2018) Patrycja Makuła et al.   Journal of Physical Chemistry Letters

InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop

(2017) Saiful Alam et al.   SUPERLATTICES AND MICROSTRUCTURES

Indium gallium nitride-based ultraviolet, blue and green light-emitting diodes functionalized with shallow periodic hole patterns

(2017) Hyun Jeong et al.   Scientific Reports

Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

(2016) Chao Zhao et al.   NANO LETTERS

Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)

(2015) Shuji Nakamura   ANNALEN DER PHYSIK

Highly enhanced green emission from InGaN quantum wells due to surface plasmon resonance on aluminum films

(2015) Kazutaka Tateishi et al.   APPLIED PHYSICS LETTERS

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

(2015) C. Prall et al.   JOURNAL OF CRYSTAL GROWTH

Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes

(2015) Hyo-Shik Choi et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes

(2015) Ji-Yeon Park et al.   Scientific Reports

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

(2015) Sofiane Belahsene et al.   Electronics

Al2O3 Passivation Layer for InGaN/GaN LED Deposited by Ultrasonic Spray Pyrolysis

(2014)   IEEE PHOTONICS TECHNOLOGY LETTERS

Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires

(2013) Th Kehagias et al.   NANOTECHNOLOGY

Blue light emission from the heterostructured ZnO/InGaN/GaN

(2013) Ti Wang et al.   Nanoscale Research Letters

Band gap narrowing and radiative efficiency of silicon doped GaN

(2008) H. P. D. Schenk et al.   JOURNAL OF APPLIED PHYSICS