InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Title
InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 11, Pages 1131-1133
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-10-10
DOI
10.1109/led.2009.2031659

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