Towards forming-free resistive switching in oxygen engineered HfO2−x

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Demonstration and modeling of multi-bit resistance random access memory

(2013) Xiang Yang et al.   APPLIED PHYSICS LETTERS

Filament observation in metal-oxide resistive switching devices

(2013) Umberto Celano et al.   APPLIED PHYSICS LETTERS

Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate

(2013) Bhaswar Chakrabarti et al.   IEEE ELECTRON DEVICE LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Multi-level conduction in NiO resistive memory device prepared by solution route

(2013) V Kannan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications

(2013) James E. Stevens et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Structural properties and electroforming-free resistive switching characteristics of GdOx, TbOx, and HoOx memory devices

(2013) Tung-Ming Pan et al.   MATERIALS CHEMISTRY AND PHYSICS

Electronic structure of oxygen vacancies in hafnium oxide

(2013) T.V. Perevalov et al.   MICROELECTRONIC ENGINEERING

Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

(2013) P Calka et al.   NANOTECHNOLOGY

Prediction of Semimetallic TetragonalHf2O3andZr2O3from First Principles

(2013) Kan-Hao Xue et al.   PHYSICAL REVIEW LETTERS

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

(2013) Yao Shuai et al.   Scientific Reports

In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

(2012) Thomas Bertaud et al.   APPLIED PHYSICS LETTERS

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

(2012) M. Sowinska et al.   APPLIED PHYSICS LETTERS

Review and Perspective of Hf-based High-kGate Dielectrics on Silicon

(2012) Gang He et al.   CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

(2012) Zhongrui Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO2±x

(2012) Erwin Hildebrandt et al.   JOURNAL OF APPLIED PHYSICS

Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures

(2012) Xavier Cartoixà et al.   PHYSICAL REVIEW B

Transport properties of HfO2−xbased resistive-switching memories

(2012) Zhongrui Wang et al.   PHYSICAL REVIEW B

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Growth of superconducting epitaxial LaNixBi2pnictide thin films with a Bi square net layer by reactive molecular beam epitaxy

(2012) A Buckow et al.   SUPERCONDUCTOR SCIENCE & TECHNOLOGY

A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory

(2011) Albert B. K. Chen et al.   ADVANCED FUNCTIONAL MATERIALS

Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM

(2011) Byung Joon Choi et al.   ADVANCED MATERIALS

Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

(2011) Erwin Hildebrandt et al.   APPLIED PHYSICS LETTERS

$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

(2011) Z. Fang et al.   IEEE ELECTRON DEVICE LETTERS

Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs

(2011) C. Hermes et al.   IEEE ELECTRON DEVICE LETTERS

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

(2011) T. Yamamoto et al.   JOURNAL OF APPLIED PHYSICS

Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy

(2011) P. Calka et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

(2011) G. Lucovsky et al.   MICROELECTRONIC ENGINEERING

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

(2011) D. Walczyk et al.   MICROELECTRONIC ENGINEERING

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

(2011) T. Bertaud et al.   THIN SOLID FILMS

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

(2010) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies

(2009) E. Hildebrandt et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Performance improvement of CuO[sub x] with gradual oxygen concentration for nonvolatile memory application

(2008) P. Zhou et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B