Impact ionization coefficients and critical electric field in GaN

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

(2021) Shinji Yamada et al.   APPLIED PHYSICS LETTERS

Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors

(2020) Hajime Tanaka et al.   Applied Physics Express

Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC

(2020) Dionysios Stefanakis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Progress on and challenges of p-type formation for GaN power devices

(2020) Tetsuo Narita et al.   JOURNAL OF APPLIED PHYSICS

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes

(2019) Takuya Maeda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

(2019) Hayata Fukushima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

(2019) Takuya Maeda et al.   IEEE ELECTRON DEVICE LETTERS

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

(2019) Takuya Maeda et al.   APPLIED PHYSICS LETTERS

Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

(2019) Dong Ji et al.   APPLIED PHYSICS LETTERS

Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

(2019) Hiroshi Ohta et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of 1200 V / 1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

(2019) Ryo Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

(2018) Naoki Sawada et al.   Applied Physics Express

Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

(2018) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

(2018) Lina Cao et al.   APPLIED PHYSICS LETTERS

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

(2018) Takuya Maeda et al.   APPLIED PHYSICS LETTERS

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

(2018) Shigeyoshi Usami et al.   APPLIED PHYSICS LETTERS

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

(2018)   JOURNAL OF APPLIED PHYSICS

Impact ionization coefficients of 4H-SiC in a wide temperature range

(2018) Y. Zhao et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

(2018)   JOURNAL OF APPLIED PHYSICS

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

(2017) Chirag Gupta et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

(2017) Min Sun et al.   IEEE ELECTRON DEVICE LETTERS

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

(2017) Wenshen Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

(2016) Takuya Maeda et al.   Applied Physics Express

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

(2016) Kazuki Nomoto et al.   IEEE ELECTRON DEVICE LETTERS

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

(2015) Tohru Oka et al.   Applied Physics Express

4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

(2015) I. C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

(2015) Hiroki Niwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

(2014) Tohru Oka et al.   Applied Physics Express

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

GaN transistors on Si for switching and high-frequency applications

(2014) Tetsuzo Ueda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Recent progress of GaN power devices for automotive applications

(2014) Tetsu Kachi   JAPANESE JOURNAL OF APPLIED PHYSICS

A model for calculating impact ionization transition rate in wurtzite GaN for use in breakdown voltage simulation

(2013) Kazuki Kodama et al.   JOURNAL OF APPLIED PHYSICS

Determination of the dielectric constant of GaN in the kHz frequency range

(2011) M J Kane et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

(2010) Yu Saitoh et al.   Applied Physics Express

Impact ionization rates for Si, GaAs, InAs, ZnS, and GaN in theGWapproximation

(2010) Takao Kotani et al.   PHYSICAL REVIEW B

Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model

(2009) Francesco Bertazzi et al.   JOURNAL OF APPLIED PHYSICS

Optical beam induced current measurements: principles and applications to SiC device characterization

(2009) Christophe Raynaud et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE