Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Impact of Molybdenum Oxide Electrode on the Ferroelectricity of Doped-Hafnia Oxide Capacitors

(2022) Ruiting Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO₂/ Si (MFIS) Gate Structure

(2022) Shujing Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs

(2022) Michael Hoffmann et al.   IEEE ELECTRON DEVICE LETTERS

A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering

(2022) Hyo‐Bae Kim et al.   Advanced Materials Interfaces

The fundamentals and applications of ferroelectric HfO2

(2022) Uwe Schroeder et al.   Nature Reviews Materials

Improved Ferroelectricity and Endurance of Hf 0.5 Zr 0.5 O 2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

(2022) Guoliang Tian et al.   Advanced Materials Interfaces

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO 2 Ferroelectric Film

(2022) Yong Bin Lee et al.   Advanced Electronic Materials

Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures

(2022) Nujhat Tasneem et al.   ACS Applied Materials & Interfaces

Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films

(2022) Boncheol Ku et al.   APPLIED SURFACE SCIENCE

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

(2021) Lutz Baumgarten et al.   APPLIED PHYSICS LETTERS

Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer

(2021) Hao-Kai Peng et al.   APPLIED PHYSICS LETTERS

Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

(2021) Yongkui Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature

(2021) Hailong Liang et al.   CERAMICS INTERNATIONAL

Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability

(2021) Dominik Kleimaier et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x O2/Interlayer/Si (MFIS) Gate Structure

(2021) Fengbin Tian et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer

(2021) Manoj Yadav et al.   NANOTECHNOLOGY

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Oxygen vacancies: The (in)visible friend of oxide electronics

(2020) F. Gunkel et al.   APPLIED PHYSICS LETTERS

Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

(2020) Beom Yong Kim et al.   APPLIED PHYSICS LETTERS

Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

(2020) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics

(2020) Alireza Kashir et al.   ADVANCED ENGINEERING MATERIALS

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

(2020) Seungyeol Oh et al.   APPLIED PHYSICS LETTERS

A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective

(2020) Ju Yong Park et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film

(2019) Takanori Mimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices

(2019) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

(2019) J. Lyu et al.   APPLIED PHYSICS LETTERS

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

(2019) D.R. Islamov et al.   MICROELECTRONIC ENGINEERING

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

(2018) Youngin Goh et al.   NANOTECHNOLOGY

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

(2018) Tae Yoon Lee et al.   ACS Applied Materials & Interfaces

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Regulating crystal structure and ferroelectricity in Sr doped HfO2 thin films fabricated by metallo-organic decomposition

(2018) Lin Tang et al.   CERAMICS INTERNATIONAL

Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing

(2017) Bo-Ting Lin et al.   JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Annealing behavior of ferroelectric Si-doped HfO2 thin films

(2016) Patrick D. Lomenzo et al.   THIN SOLID FILMS

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

(2014) Yeon Woo Yoo et al.   ACS Applied Materials & Interfaces

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

(2014) S. Starschich et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode

(2014) Takao Shimizu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

The behaviour of 180° polarization switching in BaTiO3 from first principles calculations

(2013) Hai-You Huang et al.   COMPUTATIONAL MATERIALS SCIENCE

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Landau expansion parameters for BaTiO3

(2013) Xiaoyan Lu et al.   JOURNAL OF APPLIED PHYSICS

Work function recovery of air exposed molybdenum oxide thin films

(2012) Irfan Irfan et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Ferroelectricity in Gd-Doped HfO2Thin Films

(2012) S. Mueller et al.   ECS Journal of Solid State Science and Technology

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS