New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature
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Title
New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature
Authors
Keywords
Ferroelectric materials, Ion-beam processing, Sputtering, Phase transformations, Hafnium oxide
Journal
CERAMICS INTERNATIONAL
Volume 47, Issue 19, Pages 27843-27848
Publisher
Elsevier BV
Online
2021-06-26
DOI
10.1016/j.ceramint.2021.06.212
References
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Related references
Note: Only part of the references are listed.- Phase transformation and dielectric properties of Y doped HfO2 thin films
- (2021) Hailong Liang et al. JOURNAL OF ALLOYS AND COMPOUNDS
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- Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study
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- (2017) Lun Xu et al. JOURNAL OF APPLIED PHYSICS
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- (2017) Takahisa Shiraishi et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
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- An extensive study of the influence of dopants on the ferroelectric properties of HfO2
- (2017) S. Starschich et al. Journal of Materials Chemistry C
- A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film
- (2017) Yuxing Li et al. IEEE Journal of the Electron Devices Society
- Structure and electrical properties of pure and yttrium-doped HfO 2 films by chemical solution deposition through layer by layer crystallization process
- (2017) Hailong Liang et al. MATERIALS & DESIGN
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
- (2015) R. Materlik et al. JOURNAL OF APPLIED PHYSICS
- Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
- (2014) S. Starschich et al. APPLIED PHYSICS LETTERS
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- (2012) T. Olsen et al. APPLIED PHYSICS LETTERS
- Modeling evaporation, ion-beam assist, and magnetron sputtering of thin metal films over realistic time scales
- (2012) S. Blackwell et al. PHYSICAL REVIEW B
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- (2012) Ekaterina Yurchuk et al. THIN SOLID FILMS
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