Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
Published 2022 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
Authors
Keywords
-
Journal
APPLIED SURFACE SCIENCE
Volume 601, Issue -, Pages 154039
Publisher
Elsevier BV
Online
2022-06-22
DOI
10.1016/j.apsusc.2022.154039
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
- (2020) Vekateswarlu Gaddam et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Enhanced ferroelectricity in ultrathin films grown directly on silicon
- (2020) Suraj S. Cheema et al. NATURE
- Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide
- (2019) Hojoon Ryu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- AI-Enabled Future Wireless Networks: Challenges, Opportunities, and Open Issues
- (2019) Medhat Elsayed et al. IEEE Vehicular Technology Magazine
- On the Origin of the Large Remanent Polarization in La:HfO 2
- (2019) Tony Schenk et al. Advanced Electronic Materials
- Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study
- (2018) Robin Materlik et al. JOURNAL OF APPLIED PHYSICS
- The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2
- (2018) Youngin Goh et al. NANOTECHNOLOGY
- Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction
- (2018) Min Hyuk Park et al. Advanced Electronic Materials
- Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2
- (2018) Min Hyuk Park et al. Advanced Electronic Materials
- Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS Structures
- (2018) Jackson D. Anderson et al. IEEE Journal of the Electron Devices Society
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides
- (2018) Min Hyuk Park et al. Advanced Electronic Materials
- Millimeter-Wave Wireless Communications for IoT-Cloud Supported Autonomous Vehicles: Overview, Design, and Challenges
- (2017) Linghe Kong et al. IEEE COMMUNICATIONS MAGAZINE
- Latency Critical IoT Applications in 5G: Perspective on the Design of Radio Interface and Network Architecture
- (2017) Philipp Schulz et al. IEEE COMMUNICATIONS MAGAZINE
- 256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
- (2017) Dongku Kang et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
- (2017) K. Florent et al. JOURNAL OF APPLIED PHYSICS
- Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
- (2017) Min Hyuk Park et al. Nanoscale
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants
- (2017) M. H. Park et al. Journal of Materials Chemistry C
- Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
- (2017) Min Hyuk Park et al. Nanoscale
- Induction of ferroelectricity in nanoscale ZrO 2 /HfO 2 bilayer thin films on Pt/Ti/SiO 2 /Si substrates
- (2016) Y.W. Lu et al. ACTA MATERIALIA
- Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
- (2016) Milan Pešić et al. ADVANCED FUNCTIONAL MATERIALS
- Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films
- (2016) Takahisa Shiraishi et al. APPLIED PHYSICS LETTERS
- Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
- (2016) A. G. Chernikova et al. APPLIED PHYSICS LETTERS
- Internet of Things in the 5G Era: Enablers, Architecture, and Business Models
- (2016) Maria Rita Palattella et al. IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS
- Ferroelectricity of nondoped thin HfO2films in TiN/HfO2/TiN stacks
- (2016) Tomonori Nishimura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
- (2015) Tony Schenk et al. ACS Applied Materials & Interfaces
- Correspondence - Dynamic leakage current compensation revisited
- (2015) Tony Schenk et al. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
- (2015) R. Materlik et al. JOURNAL OF APPLIED PHYSICS
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
- (2015) Patrick D. Lomenzo et al. JOURNAL OF APPLIED PHYSICS
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
- (2012) Stefan Mueller et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Phase transitions in ferroelectric silicon doped hafnium oxide
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now