A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering
Published 2022 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering
Authors
Keywords
-
Journal
Advanced Materials Interfaces
Volume 9, Issue 15, Pages 2102528
Publisher
Wiley
Online
2022-04-08
DOI
10.1002/admi.202102528
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides
- (2021) José P. B. Silva et al. ACS Energy Letters
- Piezoelectricity in hafnia
- (2021) Sangita Dutta et al. Nature Communications
- Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
- (2019) Maxim G. Kozodaev et al. JOURNAL OF APPLIED PHYSICS
- STEM-EELS IDENTIFICATION OF TIOXNY, TIN, TI2N AND O, N DISSOLUTION IN THE TI6242S ALLOY OXIDIZED IN SYNTHETIC AIR AT 650 °C
- (2019) Iman Abdallah et al. CORROSION SCIENCE
- Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
- (2019) C. Zacharaki et al. APPLIED PHYSICS LETTERS
- Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films
- (2019) C. Mart et al. APPLIED PHYSICS LETTERS
- TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect
- (2019) Yuxing Li et al. APPLIED PHYSICS LETTERS
- Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering
- (2019) Terence Mittmann et al. Advanced Materials Interfaces
- The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle
- (2019) Y. Zhou et al. COMPUTATIONAL MATERIALS SCIENCE
- Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
- (2019) Rongrong Cao et al. IEEE ELECTRON DEVICE LETTERS
- Demonstration of High Ferroelectricity (P$_r$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films
- (2019) Dipjyoti Das et al. IEEE ELECTRON DEVICE LETTERS
- Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics
- (2018) T. Ali et al. APPLIED PHYSICS LETTERS
- Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
- (2018) Si Joon Kim et al. APPLIED PHYSICS LETTERS
- Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates
- (2018) Glen Walters et al. APPLIED PHYSICS LETTERS
- Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films
- (2018) Taeho Kim et al. APPLIED PHYSICS LETTERS
- Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors
- (2018) Kuen-Yi Chen et al. IEEE ELECTRON DEVICE LETTERS
- HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
- (2017) Seungyeol Oh et al. IEEE ELECTRON DEVICE LETTERS
- Simultaneous DualEELS and EDS analysis across the ohmic contact region in 3D NAND storage and FinFET electronic devices
- (2017) P. Longo et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
- (2017) Da-Peng Xu et al. Nanoscale Research Letters
- In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
- (2017) Da-Peng Xu et al. Nanoscale Research Letters
- Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
- (2016) S. Starschich et al. APPLIED PHYSICS LETTERS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films
- (2016) Everett D. Grimley et al. Advanced Electronic Materials
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
- (2015) Min Hyuk Park et al. ADVANCED MATERIALS
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
- (2015) Patrick D. Lomenzo et al. JOURNAL OF APPLIED PHYSICS
- Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films
- (2015) M. H. Park et al. Journal of Materials Chemistry C
- Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
- (2013) Dayu Zhou et al. APPLIED PHYSICS LETTERS
- From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices
- (2013) Stefan Mueller et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy
- (2011) Jae Hyuck Jang et al. JOURNAL OF APPLIED PHYSICS
- Ferroelectricity in yttrium-doped hafnium oxide
- (2011) J. Müller et al. JOURNAL OF APPLIED PHYSICS
- First-principles calculation of oxygen K-electron energy loss near edge structure of HfO2
- (2009) T Mizoguchi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started