The future of ferroelectric field-effect transistor technology

Cryogenic characterization of a ferroelectric field-effect-transistor

(2020) Zheng Wang et al.   APPLIED PHYSICS LETTERS

Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell

(2020) Ava J. Tan et al.   IEEE ELECTRON DEVICE LETTERS

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Edge Intelligence—On the Challenging Road to a Trillion Smart Connected IoT Devices

(2019) Ali Keshavarzi et al.   IEEE Design & Test

Neuro-Mimetic Dynamics of a Ferroelectric FET-Based Spiking Neuron

(2019) Yan Fang et al.   IEEE ELECTRON DEVICE LETTERS

Reconfigurable Ferroelectric Transistor—Part I: Device Design and Operation

(2019) Sandeep Krishna Thirumala et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

(2019) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

A Swarm Optimization Solver Based on Ferroelectric Spiking Neural Networks

(2019) Yan Fang et al.   Frontiers in Neuroscience

Ferroelectric materials for neuromorphic computing

(2019) S. Oh et al.   APL Materials

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

(2019) M. Lederer et al.   APPLIED PHYSICS LETTERS

Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors

(2018) Halid Mulaosmanovic et al.   ACS Applied Materials & Interfaces

First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

(2018) Myungsoo Seo et al.   IEEE ELECTRON DEVICE LETTERS

Random Number Generation Based on Ferroelectric Switching

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

Negative Capacitance Transistors

(2018) Justin C. Wong et al.   PROCEEDINGS OF THE IEEE

Ferroelectric Oscillators and Their Coupled Networks

(2017) Zheng Wang et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET

(2017) Xueqing Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations

(2016) Tayfun Gokmen et al.   Frontiers in Neuroscience

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Deterministic switching of ferromagnetism at room temperature using an electric field

(2014) J. T. Heron et al.   NATURE

An FRAM-Based Nonvolatile Logic MCU SoC Exhibiting 100% Digital State Retention at ${\rm VDD}=$ 0 V Achieving Zero Leakage With ${<}$ 400-ns Wakeup Time for ULP Applications

(2013) Sudhanshu Khanna et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Intermittency, quasiperiodicity and chaos in probe-induced ferroelectric domain switching

(2013) A. V. Ievlev et al.   Nature Physics

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS