Challenges and Applications of Emerging Nonvolatile Memory Devices

Evolution of 0.7 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices

(2020) Writam Banerjee et al.   APPLIED PHYSICS LETTERS

Engineering of defects in resistive random access memory devices

(2020) Writam Banerjee et al.   JOURNAL OF APPLIED PHYSICS

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

(2020) Siddheswar Maikap et al.   Advanced Electronic Materials

Emerging Memory Devices for Neuromorphic Computing

(2019) Navnidhi K. Upadhyay et al.   Advanced Materials Technologies

Impacts of Cu-Doping on the Performance of La-Based RRAM Devices

(2019) Yongte Wang et al.   Nanoscale Research Letters

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

(2019) Writam Banerjee et al.   Advanced Electronic Materials

Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems

(2018) Seokjae Lim et al.   IEEE ELECTRON DEVICE LETTERS

Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

(2018) Gilbert Sassine et al.   Advanced Electronic Materials

Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

(2017) Writam Banerjee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

(2017) Writam Banerjee et al.   Nanoscale

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

A novel true random number generator based on a stochastic diffusive memristor

(2017) Hao Jiang et al.   Nature Communications

Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

(2016) Sen Liu et al.   ADVANCED MATERIALS

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

(2016) Qing Luo et al.   Nanoscale

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

(2015) Writam Banerjee et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering

(2015) Amit Prakash et al.   IEEE ELECTRON DEVICE LETTERS

Mott Memory and Neuromorphic Devices

(2015) You Zhou et al.   PROCEEDINGS OF THE IEEE

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

(2015) S. H. Misha et al.   ECS Solid State Letters

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

(2014) Xuezeng Tian et al.   ADVANCED MATERIALS

Improvement of resistive switching memory achieved by using arc-shaped bottom electrode

(2014) Zhongqiang Wang et al.   Applied Physics Express

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

(2014) Hee Woong Shin et al.   Applied Physics Express

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

(2014) Hee-Dong Kim et al.   NANOTECHNOLOGY

Ferroelectric tunnel junctions for information storage and processing

(2014) Vincent Garcia et al.   Nature Communications

Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

(2014) Shintaro Otsuka et al.   AIP Advances

Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

(2013) Cheng-Lin Tsai et al.   ACS Nano

Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units

(2013) Christopher Pearson et al.   APPLIED PHYSICS LETTERS

In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

(2013) Jun Sun et al.   APPLIED PHYSICS LETTERS

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

(2013) Xinjun Liu et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point

(2013) Writam Banerjee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

(2013) Y. S. Lin et al.   JOURNAL OF APPLIED PHYSICS

Nanoscale resistive switching devices: mechanisms and modeling

(2013) Yuchao Yang et al.   Nanoscale

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

(2013) Z. B. Yan et al.   Scientific Reports

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

(2013) Amit Prakash et al.   Nanoscale Research Letters

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO

(2012) Guang Chen et al.   ADVANCED MATERIALS

Theoretical study of Si-based ionic switch

(2012) Takashi Yamauchi et al.   APPLIED PHYSICS LETTERS

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

(2012) F. De Stefano et al.   APPLIED PHYSICS LETTERS

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

(2012) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching

(2012) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells

(2012) John R. Jameson et al.   IEEE ELECTRON DEVICE LETTERS

Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells

(2012) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application

(2012) Pinggang Peng et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric Random Access Memories

(2012) Hiroshi Ishiwara   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

(2012) Wei Lu et al.   MRS BULLETIN

Ferroelectric devices show potential

(2012) Adrian M. Ionescu   Nature Nanotechnology

Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis

(2012) Yong Chan Ju et al.   Small

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

(2012) Chung-Nan Peng et al.   Nanoscale Research Letters

Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices

(2011) Byungjin Cho et al.   ADVANCED FUNCTIONAL MATERIALS

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

(2011) Sang-Jun Choi et al.   ADVANCED MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

(2011) Takashi Fujii et al.   APPLIED PHYSICS LETTERS

Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3

(2011) X. G. Chen et al.   APPLIED PHYSICS LETTERS

Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics

(2011) Seonghyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

(2011) Feng Pan et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

(2011) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Long-Endurance Nanocrystal $\hbox{TiO}_{2}$ Resistive Memory Using a TaON Buffer Layer

(2011) C. H. Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

(2011) W. Banerjee et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Improved Resistive Switching Memory Characteristics Using Core-Shell IrOxNano-Dots in Al2O3/WOxBilayer Structure

(2011) W. Banerjee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Spin-transfer torque RAM technology: Review and prospect

(2011) T. Kawahara et al.   MICROELECTRONICS RELIABILITY

Device and SPICE modeling of RRAM devices

(2011) Patrick Sheridan et al.   Nanoscale

Scaling limits of resistive memories

(2011) Victor V Zhirnov et al.   NANOTECHNOLOGY

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

(2011) Blanka Magyari-Köpe et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

A Materials Approach to Resistive Switching Memory Oxides

(2011) M. Hasan et al.   Journal of Semiconductor Technology and Science

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano

Ferroelectric Field Effect Transistors for Memory Applications

(2010) Jason Hoffman et al.   ADVANCED MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Function by defects at the atomic scale – New concepts for non-volatile memories

(2010) Rainer Waser et al.   SOLID-STATE ELECTRONICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Resistive Switching in Organic Memories with a Spin-Coated Metal Oxide Nanoparticle Layer

(2008) Frank Verbakel et al.   Journal of Physical Chemistry C

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology