Metal oxide resistive memory switching mechanism based on conductive filament properties

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

(2011) V. Iglesias et al.   APPLIED PHYSICS LETTERS

Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

(2011) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

(2011) Nagarajan Raghavan et al.   MICROELECTRONIC ENGINEERING

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing

(2010) Pang-Shiu Chen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electronic trap characterization of the Sc2O3∕La2O3 high-κ gate stack by scanning tunneling microscopy

(2008) Y. C. Ong et al.   APPLIED PHYSICS LETTERS

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics

(2008) Vasil Yanev et al.   APPLIED PHYSICS LETTERS

Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures

(2008) Yun-Chi Wu et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today