Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

Published 2011 View Full Article

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Title
Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 22, Issue 25, Pages 254029
Publisher
IOP Publishing
Online
2011-05-17
DOI
10.1088/0957-4484/22/25/254029

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