Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System

(2019) Byung Chul Jang et al.   NANO LETTERS

Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems

(2018) Seokjae Lim et al.   IEEE ELECTRON DEVICE LETTERS

HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study

(2018) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

(2018) Zhipeng Dong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of the multilevel capability of TiN/Ti/HfO 2 /W resistive switching devices by sweep and pulse programming

(2018) S. Poblador et al.   MICROELECTRONIC ENGINEERING

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

(2018) Writam Banerjee et al.   Advanced Electronic Materials

Mechanically controlled quantum interference in graphene break junctions

(2018) Sabina Caneva et al.   Nature Nanotechnology

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

(2017) Sk. Ziaur Rahaman et al.   LANGMUIR

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

(2017) Writam Banerjee et al.   Nanoscale

Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

(2017) Fekadu Gochole Aga et al.   NANOTECHNOLOGY

Multibit memory operation of metal-oxide bi-layer memristors

(2017) Spyros Stathopoulos et al.   Scientific Reports

HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

(2016) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States

(2016) S. R. Nandakumar et al.   NANO LETTERS

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

(2016) Qing Luo et al.   Nanoscale

Microstructure dependent filament forming kinetics in HfO2programmable metallization cells

(2016) Heidi Clarke et al.   NANOTECHNOLOGY

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

(2016) M. J. Wang et al.   AIP Advances

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

(2016) Fekadu Gochole Aga et al.   AIP Advances

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

(2015) Felix Messerschmitt et al.   ADVANCED FUNCTIONAL MATERIALS

Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures

(2015) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Conductance Quantization in Resistive Random Access Memory

(2015) Yang Li et al.   Nanoscale Research Letters

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Conductance Quantization in Resistive Random Access Memory

(2015) Yang Li et al.   Nanoscale Research Letters

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

(2014) Pauline Calka et al.   ACS Applied Materials & Interfaces

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

(2014) S. Gao et al.   APPLIED PHYSICS LETTERS

Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon

(2014) Chengqing Hu et al.   NANO LETTERS

Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

(2014) B. Attarimashalkoubeh et al.   ECS Solid State Letters

Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices

(2013) Xiang Yang et al.   ACS Nano

Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

(2013) C. Chen et al.   APPLIED PHYSICS LETTERS

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

(2013) N. Raghavan et al.   MICROELECTRONIC ENGINEERING

A current-driven single-atom memory

(2013) C. Schirm et al.   Nature Nanotechnology

Quantum Conductance in Silicon Oxide Resistive Memory Devices

(2013) A. Mehonic et al.   Scientific Reports

Mechanical Break Junctions: Enormous Information in a Nanoscale Package

(2012) Douglas Natelson   ACS Nano

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

(2012) E. Miranda et al.   APPLIED PHYSICS LETTERS

Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch

(2012) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Improved Resistive Switching Memory Characteristics Using Core-Shell IrOxNano-Dots in Al2O3/WOxBilayer Structure

(2011) W. Banerjee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

From stochastic single atomic switch to nanoscale resistive memory device

(2011) Attila Geresdi et al.   Nanoscale

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear Out

(2009) Sahar Sahhaf et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES