Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Published 2011 View Full Article

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Title
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 12, Pages 4309-4317
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-10-12
DOI
10.1109/ted.2011.2167513

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