Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

(2013) Amit Prakash et al.   Nanoscale Research Letters

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching

(2013) Chih-Yi Liu et al.   Nanoscale Research Letters

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

(2013) Adnan Younis et al.   Nanoscale Research Letters

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

(2013) Run-Chen Fang et al.   Nanoscale Research Letters

Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

(2013) Amit Prakash et al.   Nanoscale Research Letters

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

(2012) Sheikh Rahaman et al.   Nanoscale Research Letters

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

Effect of non-lattice oxygen on ZrO2-based resistive switching memory

(2012) Chun-Chieh Lin et al.   Nanoscale Research Letters

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

(2012) Writam Banerjee et al.   Nanoscale Research Letters

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

(2012) Chung-Nan Peng et al.   Nanoscale Research Letters

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology