In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Engineering of defects in resistive random access memory devices

(2020) Writam Banerjee et al.   JOURNAL OF APPLIED PHYSICS

Reliability of analog resistive switching memory for neuromorphic computing

(2020) Meiran Zhao et al.   Applied Physics Reviews

ReRAM: History, Status, and Future

(2020) Yangyin Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications

(2019) Alessandro Grossi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

(2019) Writam Banerjee et al.   Advanced Electronic Materials

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

(2018) Jigang Ma et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Power Forming Free TiO2–x/HfO2–y/TiO2–x-Trilayer RRAM Devices Exhibiting Synaptic Property Characteristics

(2017) Panagiotis Bousoulas et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of post-metal annealing on the electrical characteristics of HfO x -based resistive switching memory devices

(2017) Kai-Chi Chuang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

(2017) Writam Banerjee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

(2017) Writam Banerjee et al.   Nanoscale

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

(2016) Qing Luo et al.   Nanoscale

Controllable Formation of Nanofilaments in Resistive Memories via Tip-Enhanced Electric Fields

(2016) Keun-Young Shin et al.   Advanced Electronic Materials

Causes and consequences of the stochastic aspect of filamentary RRAM

(2015) R. Degraeve et al.   MICROELECTRONIC ENGINEERING

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

(2013) C. Chen et al.   APPLIED PHYSICS LETTERS

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

(2013) N. Raghavan et al.   MICROELECTRONIC ENGINEERING

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

(2013) Amit Prakash et al.   Nanoscale Research Letters

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

(2011) W. Banerjee et al.   JOURNAL OF APPLIED PHYSICS

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Modulated charged defects and conduction behaviour in doped BiFeO3thin films

(2009) Y Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nonvolatile Memory Characteristics of NMOSFET With Ag Nanocrystals Synthesized via a Thermal Decomposition Process for Uniform Device Distribution

(2008) Seong-Wan Ryu et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY