Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
Authors
Keywords
-
Journal
ADVANCED MATERIALS
Volume 24, Issue 2, Pages 252-267
Publisher
Wiley
Online
2011-09-29
DOI
10.1002/adma.201102597
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Memristive operations demonstrated by gap-type atomic switches
- (2011) Tsuyoshi Hasegawa et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Theoretical investigation of kinetics of a Cu2S-based gap-type atomic switch
- (2011) Alpana Nayak et al. APPLIED PHYSICS LETTERS
- Switching kinetics of a Cu2S-based gap-type atomic switch
- (2011) Alpana Nayak et al. NANOTECHNOLOGY
- Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch
- (2011) Tohru Tsuruoka et al. NANOTECHNOLOGY
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- Conductive Path Formation in the Ta2O5 Atomic Switch: First-Principles Analyses
- (2010) Tingkun Gu et al. ACS Nano
- A Polymer-Electrolyte-Based Atomic Switch
- (2010) Shouming Wu et al. ADVANCED FUNCTIONAL MATERIALS
- Multilevel Atomic-Scale Transistors Based on Metallic Quantum Point Contacts
- (2010) Fangqing Xie et al. ADVANCED MATERIALS
- Learning Abilities Achieved by a Single Solid-State Atomic Switch
- (2010) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Volatile/Nonvolatile Dual-Functional Atom Transistor
- (2010) Tsuyoshi Hasegawa et al. Applied Physics Express
- Off-state and turn-on characteristics of solid electrolyte switch
- (2010) Y. Tsuji et al. APPLIED PHYSICS LETTERS
- Nonvolatile triode switch using electrochemical reaction in copper sulfide
- (2010) Toshitsugu Sakamoto et al. APPLIED PHYSICS LETTERS
- The Resistive Switching Mechanism of Ag/SrTiO[sub 3]/Pt Memory Cells
- (2010) X. B. Yan et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte
- (2010) S. Z. Rahaman et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise
- (2010) R. Soni et al. JOURNAL OF APPLIED PHYSICS
- Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch
- (2010) Alpana Nayak et al. Journal of Physical Chemistry Letters
- ? Bipolar resistive switching characteristics of Cu/TaOx/Pt structures
- (2010) Dong-Wook Kim et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Self-Aligned Memristor Cross-Point Arrays Fabricated with One Nanoimprint Lithography Step
- (2010) Qiangfei Xia et al. NANO LETTERS
- Forming and switching mechanisms of a cation-migration-based oxide resistive memory
- (2010) T Tsuruoka et al. NANOTECHNOLOGY
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating
- (2010) Yu Chao Yang et al. NEW JOURNAL OF PHYSICS
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- Photoassisted Formation of an Atomic Switch
- (2010) Takami Hino et al. Small
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion
- (2009) Masamitsu Haemori et al. Applied Physics Express
- Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation
- (2009) Ramanathaswamy Pandian et al. APPLIED PHYSICS LETTERS
- Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
- (2009) Qi Liu et al. APPLIED PHYSICS LETTERS
- Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications
- (2009) Yingtao Li et al. IEEE ELECTRON DEVICE LETTERS
- Temperature and Electrode-Size Dependences of the Resistive Switching Characteristics of CuOx Thin Films
- (2009) L. Tang et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- Conductance switching in Ag2S devices fabricated byin situsulfurization
- (2009) M Morales-Masis et al. NANOTECHNOLOGY
- Low current resistive switching in Cu–SiO2 cells
- (2008) C. Schindler et al. APPLIED PHYSICS LETTERS
- Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch
- (2008) Naoki Banno et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of sulfurization conditions on structural and electrical properties of copper sulfide films
- (2008) Manisha Kundu et al. JOURNAL OF APPLIED PHYSICS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More