Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

Published 2015 View Full Article

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Title
Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 333-335
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-02-27
DOI
10.1109/led.2015.2407361

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