Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability

(2010) Terry Tai-Jui Wang et al.   APPLIED PHYSICS LETTERS

Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer

(2010) Chenxin Zhu et al.   APPLIED PHYSICS LETTERS

Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO2/Al2O3 bilayered tunnel barrier

(2010) Do-Joong Lee et al.   JOURNAL OF APPLIED PHYSICS

Charging Effect of Aluminum Nitride Thin Films Containing Al Nanocrystals

(2010) Y. Liu et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application

(2009) Yanli Pei et al.   APPLIED PHYSICS LETTERS

Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

(2009) Yanli Pei et al.   APPLIED PHYSICS LETTERS

A nonvolatile memory capacitor based on Au nanocrystals with HfO2 tunneling and blocking layers

(2009) V. Mikhelashvili et al.   APPLIED PHYSICS LETTERS

Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO[sub 2] for Nonvolatile Memory Devices

(2009) Honggyu Kim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure

(2009) M. Yang et al.   JOURNAL OF APPLIED PHYSICS

Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory

(2009) Qingyun Zuo et al.   JOURNAL OF APPLIED PHYSICS

Silicon Dioxide Embedded Germanium Nanocrystals Grown Using Molecular Beam Epitaxy for Floating Gate Memory Devices

(2009) S. Das et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

High-κ HfO[sub 2] Nanocrystal Memory Capacitors Prepared by Phase Separation of Atomic-Layer-Deposited HfO[sub 2]∕Al[sub 2]O[sub 3] Nanomixtures

(2009) S. Maikap et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

(2008) C. H. Chen et al.   APPLIED PHYSICS LETTERS

Performance improvement of flash memory using AlN as charge-trapping Layer

(2008) P. Chakraborty et al.   MICROELECTRONIC ENGINEERING

Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Ptcapacitors

(2008) S Maikap et al.   NANOTECHNOLOGY