On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

(2012) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo

(2010) Gunther Jegert et al.   APPLIED PHYSICS LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Filamentary model of dielectric breakdown

(2010) S. Blonkowski   JOURNAL OF APPLIED PHYSICS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS