Engineering of defects in resistive random access memory devices

A System-Level Simulator for RRAM-Based Neuromorphic Computing Chips

(2019) Matthew Kay Fei Lee et al.   ACM Transactions on Architecture and Code Optimization

Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System

(2019) Byung Chul Jang et al.   NANO LETTERS

Emerging Memory Devices for Neuromorphic Computing

(2019) Navnidhi K. Upadhyay et al.   Advanced Materials Technologies

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

(2019) Donguk Lee et al.   Advanced Electronic Materials

Memristive crossbar arrays for brain-inspired computing

(2019) Qiangfei Xia et al.   NATURE MATERIALS

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

(2019) Hong Wang et al.   Physica Status Solidi-Rapid Research Letters

A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

(2019) Qilin Hua et al.   Advanced Science

Cross-point Resistive Memory

(2019) Chengning Wang et al.   ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

(2019) Writam Banerjee et al.   Advanced Electronic Materials

Origin of negative resistance in anion migration controlled resistive memory

(2018) Writam Banerjee et al.   APPLIED PHYSICS LETTERS

Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

(2018) Quantan Wu et al.   APPLIED PHYSICS LETTERS

Improved switching reliability achieved in HfO x based RRAM with mountain-like surface-graphited carbon layer

(2018) Ye Tao et al.   APPLIED SURFACE SCIENCE

Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems

(2018) Seokjae Lim et al.   IEEE ELECTRON DEVICE LETTERS

Gate Controlled Three-Terminal Metal Oxide Memristor

(2018) Eric Herrmann et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule

(2018) Writam Banerjee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conduction mechanisms, dynamics and stability in ReRAMs

(2018) Chen Wang et al.   MICROELECTRONIC ENGINEERING

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

(2018) Daniele Ielmini   MICROELECTRONIC ENGINEERING

Full imitation of synaptic metaplasticity based on memristor devices

(2018) Quantan Wu et al.   Nanoscale

Wireless Communication and Security Issues for Cyber–Physical Systems and the Internet-of-Things

(2018) Andreas Burg et al.   PROCEEDINGS OF THE IEEE

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

(2018) Writam Banerjee et al.   Advanced Electronic Materials

Review of memristor devices in neuromorphic computing: materials sciences and device challenges

(2018) Yibo Li et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Perspective: A review on memristive hardware for neuromorphic computation

(2018) Changhyuck Sung et al.   JOURNAL OF APPLIED PHYSICS

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

(2018) Shuang Pi et al.   Nature Nanotechnology

Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

(2017) Writam Banerjee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

(2017) Writam Banerjee et al.   Nanoscale

Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

(2017) Writam Banerjee et al.   Nanoscale

Sparse coding with memristor networks

(2017) Patrick M. Sheridan et al.   Nature Nanotechnology

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

A novel true random number generator based on a stochastic diffusive memristor

(2017) Hao Jiang et al.   Nature Communications

Memory selector devices and crossbar array design: a modeling-based assessment

(2017) An Chen   Journal of Computational Electronics

Complementary Switching in 3D Resistive Memory Array

(2017) Writam Banerjee et al.   Advanced Electronic Materials

Graphene and Related Materials for Resistive Random Access Memories

(2017) Fei Hui et al.   Advanced Electronic Materials

A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

(2017) Mohammed Zackriya et al.   Scientific Reports

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

(2017) B. Chakrabarti et al.   Scientific Reports

Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces

(2017) Seokjae Won et al.   Scientific Reports

High-Speed and Low-Energy Nitride Memristors

(2016) Byung Joon Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Ultra-Wideband Multi-Dye-Sensitized Upconverting Nanoparticles for Information Security Application

(2016) Jongha Lee et al.   ADVANCED MATERIALS

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

(2016) Sen Liu et al.   ADVANCED MATERIALS

Resistance random access memory

(2016) Ting-Chang Chang et al.   Materials Today

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

(2016) Qing Luo et al.   Nanoscale

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Ferritin Protein Regulates the Degradation of Iron Oxide Nanoparticles

(2016) Jeanne Volatron et al.   Small

A review of emerging non-volatile memory (NVM) technologies and applications

(2016) An Chen   SOLID-STATE ELECTRONICS

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

(2016) Fekadu Gochole Aga et al.   AIP Advances

Controllable Formation of Nanofilaments in Resistive Memories via Tip-Enhanced Electric Fields

(2016) Keun-Young Shin et al.   Advanced Electronic Materials

Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

(2016) Agnes Gubicza et al.   Scientific Reports

Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics

(2015) Chao Du et al.   ADVANCED FUNCTIONAL MATERIALS

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

(2015) Writam Banerjee et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Characterization of Physical Unclonable Function Based on 1 kb Resistive Random Access Memory Arrays

(2015) Rui Liu et al.   IEEE ELECTRON DEVICE LETTERS

On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

(2015) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach

(2015) Nagarajan Raghavan et al.   MICROELECTRONICS RELIABILITY

Nano Meets Security: Exploring Nanoelectronic Devices for Security Applications

(2015) Jeyavijayan Rajendran et al.   PROCEEDINGS OF THE IEEE

Mott Memory and Neuromorphic Devices

(2015) You Zhou et al.   PROCEEDINGS OF THE IEEE

Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

(2015) Sukhyung Park et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A Fully Transparent Resistive Memory for Harsh Environments

(2015) Po-Kang Yang et al.   Scientific Reports

Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes

(2015) Yue Bai et al.   Scientific Reports

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

(2015) S. H. Misha et al.   ECS Solid State Letters

Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks

(2015) Yi Li et al.   Advanced Electronic Materials

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

(2014) Xuezeng Tian et al.   ADVANCED MATERIALS

Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

(2014) Shu-Chao Qin et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Improvement of resistive switching memory achieved by using arc-shaped bottom electrode

(2014) Zhongqiang Wang et al.   Applied Physics Express

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

(2014) Hee Woong Shin et al.   Applied Physics Express

Crossbar RRAM Arrays: Selector Device Requirements During Write Operation

(2014) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

(2014) Hee-Dong Kim et al.   NANOTECHNOLOGY

A million spiking-neuron integrated circuit with a scalable communication network and interface

(2014) P. A. Merolla et al.   SCIENCE

MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

(2014) Rohit S Shenoy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Artificial synapse network on inorganic proton conductor for neuromorphic systems

(2014) Li Qiang Zhu et al.   Nature Communications

Electrode dependence of resistive switching in Au/Ni–Au nanoparticle devices

(2014) Shuai Zhong et al.   RSC Advances

Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

(2014) Shintaro Otsuka et al.   AIP Advances

Focused ion beam and field-emission microscopy of metallic filaments in memory devices based on thin films of an ambipolar organic compound consisting of oxadiazole, carbazole, and fluorene units

(2013) Christopher Pearson et al.   APPLIED PHYSICS LETTERS

In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

(2013) Jun Sun et al.   APPLIED PHYSICS LETTERS

Formation process of conducting filament in planar organic resistive memory

(2013) S. Gao et al.   APPLIED PHYSICS LETTERS

High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode

(2013) Yu-Chih Huang et al.   IEEE ELECTRON DEVICE LETTERS

Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application

(2013) Z. Fang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-κ Al2O3/WOxBilayer Dielectrics for Low-Power Resistive Switching Memory Applications

(2013) Writam Banerjee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes

(2013) Jae-Deuk Kim et al.   JOURNAL OF APPLIED PHYSICS

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

(2013) Sangsu Park et al.   NANOTECHNOLOGY

Integration of nanoscale memristor synapses in neuromorphic computing architectures

(2013) Giacomo Indiveri et al.   NANOTECHNOLOGY

Ultrafast Synaptic Events in a Chalcogenide Memristor

(2013) Yi Li et al.   Scientific Reports

Electric-field-induced metal maintained by current of the Mott insulator Ca2RuO4

(2013) Fumihiko Nakamura et al.   Scientific Reports

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

(2013) Z. B. Yan et al.   Scientific Reports

Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

(2012) Zhong Qiang Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Improving the electrical performance of resistive switching memory using doping technology

(2012) Yan Wang et al.   CHINESE SCIENCE BULLETIN

A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

(2012) Chien-Yuan Huang et al.   IEEE ELECTRON DEVICE LETTERS

Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells

(2012) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films

(2012) Lu Liu et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application

(2012) Pinggang Peng et al.   JOURNAL OF APPLIED PHYSICS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis

(2012) Yong Chan Ju et al.   Small

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

(2012) Writam Banerjee et al.   Nanoscale Research Letters

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

(2012) Chung-Nan Peng et al.   Nanoscale Research Letters

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

(2011) Ting Chang et al.   ACS Nano

Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices

(2011) Byungjin Cho et al.   ADVANCED FUNCTIONAL MATERIALS

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

(2011) Sang-Jun Choi et al.   ADVANCED MATERIALS

In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

(2011) Takashi Fujii et al.   APPLIED PHYSICS LETTERS

Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

(2011) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Long-Endurance Nanocrystal $\hbox{TiO}_{2}$ Resistive Memory Using a TaON Buffer Layer

(2011) C. H. Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

(2011) W. Banerjee et al.   JOURNAL OF APPLIED PHYSICS

Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates

(2011) Si-Hoon Lyu et al.   JOURNAL OF MATERIALS CHEMISTRY

Improved Resistive Switching Memory Characteristics Using Core-Shell IrOxNano-Dots in Al2O3/WOxBilayer Structure

(2011) W. Banerjee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications

(2011) Xinjun Liu et al.   NANOTECHNOLOGY

Resistive random access memory utilizing ferritin protein with Pt nanoparticles

(2011) Mutsunori Uenuma et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A stacked memory device on logic 3D technology for ultra-high-density data storage

(2011) Jiyoung Kim et al.   NANOTECHNOLOGY

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano

Ultrafast resistive switching in SrTiO3:Nb single crystal

(2010) X. T. Zhang et al.   APPLIED PHYSICS LETTERS

Nanoscale imaging and control of resistance switching in VO2 at room temperature

(2010) Jeehoon Kim et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF APPLIED PHYSICS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

(2009) Y. C. Yang et al.   JOURNAL OF APPLIED PHYSICS

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Four-dimensional address topology for circuits with stacked multilayer crossbar arrays

(2009) D. B. Strukov et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer

(2008) Chih-Yang Lin et al.   IEEE ELECTRON DEVICE LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

(2007) L. Courtade et al.   THIN SOLID FILMS