Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

(2012) Thomas Bertaud et al.   APPLIED PHYSICS LETTERS

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

(2012) M. Sowinska et al.   APPLIED PHYSICS LETTERS

Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

(2012) Seonghyun Kim et al.   NANOTECHNOLOGY

Transport properties of HfO2−xbased resistive-switching memories

(2012) Zhongrui Wang et al.   PHYSICAL REVIEW B

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Resistive Switching Behavior and Multiple Transmittance States in Solution-Processed Tungsten Oxide

(2011) Wei-Ting Wu et al.   ACS Applied Materials & Interfaces

Schottky Barrier Mediated Single-Polarity Resistive Switching in Pt Layer-Included TiOx Memory Device

(2011) Yu-Lung Chung et al.   ACS Applied Materials & Interfaces

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Understanding the intermediate initial state in TiO2−δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices

(2011) Y. S. Chen et al.   APPLIED PHYSICS LETTERS

Observation of two resistance switching modes in TiO2memristive devices electroformed at low current

(2011) Feng Miao et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

(2011) T. Bertaud et al.   THIN SOLID FILMS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films

(2010) Hu Young Jeong et al.   APPLIED PHYSICS LETTERS

Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

(2010) Jiun-Jia Huang et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Electronic structure of Pt/HfO2 interface with oxygen vacancy

(2009) Eunae Cho et al.   MICROELECTRONIC ENGINEERING

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

X-ray photoelectron spectroscopic analysis of HfSiON thin films

(2008) Lulu Zhang et al.   SURFACE AND INTERFACE ANALYSIS