MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

The effect of electron induced hydrogenation of graphene on its electrical transport properties

(2013) Sung Oh Woo et al.   APPLIED PHYSICS LETTERS

Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM

(2013) Florian Lentz et al.   IEEE ELECTRON DEVICE LETTERS

A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics

(2013) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO2/p+-Si heterostructure

(2012) Yang Yang et al.   APPLIED PHYSICS LETTERS

Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

(2012) V. S. S. Srinivasan et al.   IEEE ELECTRON DEVICE LETTERS

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

(2012) Yexin Deng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications

(2011) Jiun-Jia Huang et al.   IEEE ELECTRON DEVICE LETTERS

Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices

(2011) Alvaro Padilla et al.   JOURNAL OF APPLIED PHYSICS

Phase-change random access memory: A scalable technology

(2010) S. Raoux et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE