Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

(2017) Writam Banerjee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

(2017) Writam Banerjee et al.   Nanoscale

Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

(2017) Writam Banerjee et al.   Nanoscale

Complementary Switching in 3D Resistive Memory Array

(2017) Writam Banerjee et al.   Advanced Electronic Materials

Complementary resistive switching of annealed Ti/Cu2O/Ti stacks

(2016) Hao-Yu Wang et al.   Applied Physics Express

Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure

(2016) Debanjan Jana et al.   APPLIED PHYSICS LETTERS

Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

(2016) H. Z. Zhang et al.   APPLIED PHYSICS LETTERS

Complementary resistive switching in single sandwich structure for crossbar memory arrays

(2016) W. J. Duan et al.   JOURNAL OF APPLIED PHYSICS

Multifunctional resistive switching behaviors employing various electroforming steps

(2016) Ah Rahm Lee et al.   Journal of Materials Chemistry C

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

(2015) Yi-Ting Tseng et al.   APPLIED PHYSICS LETTERS

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

(2015) Writam Banerjee et al.   IEEE ELECTRON DEVICE LETTERS

Carbothermal synthesis of metal-functionalized nanostructures for energy and environmental applications

(2015) Yafei Shen   Journal of Materials Chemistry A

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

(2013) Shih-Ming Lin et al.   ACS Applied Materials & Interfaces

Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching

(2013) Chao Chen et al.   ACS Applied Materials & Interfaces

A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics

(2013) An Chen   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes

(2013) Rohit Soni et al.   Nanoscale

Ag/GeS x /Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures

(2013) Jan van den Hurk et al.   Scientific Reports

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Analysis of Complementary RRAM Switching

(2012) Dirk J. Wouters et al.   IEEE ELECTRON DEVICE LETTERS

Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps

(2012) S. Schmelzer et al.   IEEE ELECTRON DEVICE LETTERS

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

(2012) Guangsheng Tang et al.   Nanoscale

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

(2011) Yoon Cheol Bae et al.   ADVANCED FUNCTIONAL MATERIALS

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

(2011) Yang Chai et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS