Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach

Published 2015 View Full Article

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Title
Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach
Authors
Keywords
Conductive filament, Diffusion barrier, Markov model, Retention failure, RRAM
Journal
MICROELECTRONICS RELIABILITY
Volume 55, Issue 9-10, Pages 1422-1426
Publisher
Elsevier BV
Online
2015-07-12
DOI
10.1016/j.microrel.2015.06.090

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