Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

(2015) Xiaoxin Xu et al.   IEEE ELECTRON DEVICE LETTERS

Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory

(2015) Yunmo Koo et al.   IEEE ELECTRON DEVICE LETTERS

Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM

(2015) S. Lim et al.   ECS Solid State Letters

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

(2014) B.D. Briggs et al.   THIN SOLID FILMS

Random telegraph noise and resistance switching analysis of oxide based resistive memory

(2013) Shinhyun Choi et al.   Nanoscale

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

(2012) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

(2009) D. Kamalanathan et al.   IEEE ELECTRON DEVICE LETTERS