Fully CMOS-Compatible 1T1R Integration of Vertical Nanopillar GAA Transistor and Oxide-Based RRAM Cell for High-Density Nonvolatile Memory Application

Transport properties of HfO2−xbased resistive-switching memories

(2012) Zhongrui Wang et al.   PHYSICAL REVIEW B

$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

(2011) Z. Fang et al.   IEEE ELECTRON DEVICE LETTERS

Unipolar resistive switching effect in YMn1−δO3 thin films

(2010) Z. B. Yan et al.   APPLIED PHYSICS LETTERS

Resistive switching behaviors of ZnO nanorod layers

(2010)   APPLIED PHYSICS LETTERS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

(2008) H. B. Lv et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today