Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 22, Pages 224505
Publisher
AIP Publishing
Online
2013-12-14
DOI
10.1063/1.4846759
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
- (2013) Shimeng Yu et al. ADVANCED MATERIALS
- Multimode threshold and bipolar resistive switching in bi-layered Pt-Fe2O3 core-shell and Fe2O3 nanoparticle assembly
- (2013) Jin-Yong Lee et al. APPLIED PHYSICS LETTERS
- On the physical properties of memristive, memcapacitive and meminductive systems
- (2013) Massimiliano Di Ventra et al. NANOTECHNOLOGY
- Digital versus analog resistive switching depending on the thickness of nickel oxide nanoparticle assembly
- (2013) Hyung Jun Kim et al. RSC Advances
- Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications
- (2012) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Resistive switching characteristics of maghemite nanoparticle assembly on Al and Pt electrodes on a flexible substrate
- (2012) Jae Woo Yoo et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Tunable threshold resistive switching characteristics of Pt–Fe2O3core–shell nanoparticleassembly by space charge effect
- (2012) Yoon-Jae Baek et al. Nanoscale
- High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
- (2012) Fabien Alibart et al. NANOTECHNOLOGY
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
- (2011) Ting Chang et al. ACS Nano
- The switching location of a bipolar memristor: chemical, thermal and structural mapping
- (2011) John Paul Strachan et al. NANOTECHNOLOGY
- Learning Abilities Achieved by a Single Solid-State Atomic Switch
- (2010) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter
- (2010) S B Lee et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- An electrically modifiable synapse array of resistive switching memory
- (2009) Hyejung Choi et al. NANOTECHNOLOGY
- Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
- (2009) Massimiliano Di Ventra et al. PROCEEDINGS OF THE IEEE
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
Become a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get StartedAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started