Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

(2018) A. de Jamblinne de Meux et al.   JOURNAL OF APPLIED PHYSICS

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

(2017) Sungju Choi et al.   IEEE ELECTRON DEVICE LETTERS

Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor

(2017) A de Jamblinne de Meux et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Oxygen vacancies effects in a-IGZO: Formation mechanisms, hysteresis, and negative bias stress effects (Phys. Status Solidi A 6∕2017)

(2017) Albert de Jamblinne de Meux et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors

(2016) Jozeph Park et al.   JOURNAL OF ELECTROCERAMICS

Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors

(2016) W. H. Han et al.   Physical Review Applied

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

(2015) Hui-Min Qian et al.   Chinese Physics B

Flexible In-Ga-Zn-O thin-film transistors fabricated on polyimide substrates and mechanically induced instability under negative bias illumination stress

(2015) Jozeph Park et al.   JOURNAL OF ELECTROCERAMICS

Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

(2015) A de Jamblinne de Meux et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

(2015) Young Jun Oh et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

(2015) Jang Yeon Kwon et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy

(2015) Sungsik Lee et al.   Scientific Reports

Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior

(2015) W. H. Han et al.   Physical Review Applied

Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors

(2015) Youngho Kang et al.   Advanced Electronic Materials

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

(2014) John Robertson et al.   APPLIED PHYSICS LETTERS

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

(2014) S. Sallis et al.   APPLIED PHYSICS LETTERS

Current hysteresis by oxygen vacancy exchange between oxides in Pt/a-IGZO/TaOx/W

(2014) Hyeon-Min Kwon et al.   APPLIED SURFACE SCIENCE

An efficient method to generate amorphous structures based on local geometry

(2014) Yong Youn et al.   COMPUTATIONAL MATERIALS SCIENCE

Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence

(2014) Kay Domen et al.   Journal of Display Technology

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

(2014) Ho-Hyun Nahm et al.   NPG Asia Materials

Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor

(2014) M. P. Hung et al.   ECS Solid State Letters

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

(2013) Ken Watanabe et al.   APPLIED PHYSICS LETTERS

Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

(2013) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Origin of subgap states in amorphous In-Ga-Zn-O

(2013) Wolfgang Körner et al.   JOURNAL OF APPLIED PHYSICS

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

(2013) Jae Kyeong Jeong   JOURNAL OF MATERIALS RESEARCH

cp2k: atomistic simulations of condensed matter systems

(2013) Jürg Hutter et al.   Wiley Interdisciplinary Reviews-Computational Molecular Science

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

(2012) Moon-Seok Kim et al.   APPLIED PHYSICS LETTERS

Python Materials Genomics (pymatgen): A robust, open-source python library for materials analysis

(2012) Shyue Ping Ong et al.   COMPUTATIONAL MATERIALS SCIENCE

Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy

(2012) Kyeongmi Lee et al.   JOURNAL OF APPLIED PHYSICS

Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

(2012) Hyo Jin Kim et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

(2012) Ho-Hyun Nahm et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O

(2012) Kenji Nomura et al.   ECS Journal of Solid State Science and Technology

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

(2011) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

(2011) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors

(2011) Wei-Tsung Chen et al.   IEEE ELECTRON DEVICE LETTERS

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

(2011) Jae Kyeong Jeong   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Auxiliary Density Matrix Methods for Hartree−Fock Exchange Calculations

(2010) Manuel Guidon et al.   Journal of Chemical Theory and Computation

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory

(2010) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Material characteristics and applications of transparent amorphous oxide semiconductors

(2010) Toshio Kamiya et al.   NPG Asia Materials

Local structure and conduction mechanism in amorphous In–Ga–Zn–O films

(2009) Deok-Yong Cho et al.   APPLIED PHYSICS LETTERS

Robust Periodic Hartree−Fock Exchange for Large-Scale Simulations Using Gaussian Basis Sets

(2009) Manuel Guidon et al.   Journal of Chemical Theory and Computation

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Hybrid functionals applied to extended systems

(2008) M Marsman et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Defect energetics in ZnO: A hybrid Hartree-Fock density functional study

(2008) Fumiyasu Oba et al.   PHYSICAL REVIEW B

Transparent, high mobility InGaZnO thin films deposited by PLD

(2007) Arun Suresh et al.   THIN SOLID FILMS