Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

Oxygen Diffusion Phenomena and Hydrogen Incorporation in Reducing BaTiO$_{3}$ Ceramics Doped with Ho below Solubility Limit

(2012) Isao Sakaguchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

(2012) Ho-Hyun Nahm et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O

(2012) Kenji Nomura et al.   ECS Journal of Solid State Science and Technology

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay

(2010) Dong Hee Lee et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Ab initiomodeling of diffusion in indium oxide

(2010) Péter Ágoston et al.   PHYSICAL REVIEW B

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Hydrogen interactions with acceptor impurities inSnO2: First-principles calculations

(2009) J. B. Varley et al.   PHYSICAL REVIEW B

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Defect energetics in ZnO: A hybrid Hartree-Fock density functional study

(2008) Fumiyasu Oba et al.   PHYSICAL REVIEW B