Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor

Published 2014 View Full Article

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Title
Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor
Authors
Keywords
-
Journal
ECS Solid State Letters
Volume 3, Issue 3, Pages Q13-Q16
Publisher
The Electrochemical Society
Online
2014-01-24
DOI
10.1149/2.010403ssl

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