Subgap States near the Conduction-Band Edge Due to Undercoordinated Cations in Amorphous In-Ga-Zn-O and Zn-Sn-O Semiconductors

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

(2016) Won-Gi Kim et al.   Scientific Reports

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

(2015) Shawn Sallis et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior

(2015) W. H. Han et al.   Physical Review Applied

Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors

(2015) Sungsik Lee et al.   Scientific Reports

Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors

(2014) Seokhyun Yoon et al.   ACS Applied Materials & Interfaces

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

(2014) John Robertson et al.   APPLIED PHYSICS LETTERS

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

(2014) S. Sallis et al.   APPLIED PHYSICS LETTERS

Oxygen flow effects on electrical properties, stability, and density of states of amorphous In–Ga–Zn–O thin-film transistors

(2014) Yong-Su Lee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization

(2014) Eric Kai-Hsiang Yu et al.   JOURNAL OF APPLIED PHYSICS

Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

(2014) Q. Zhu et al.   JOURNAL OF APPLIED PHYSICS

Origin of electrical improvement of amorphous TaInZnO TFT by oxygen thermo-pressure-induced process

(2014) Byung Du Ahn et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

(2014) Ho-Hyun Nahm et al.   NPG Asia Materials

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

(2013) S. Bubel et al.   APPLIED PHYSICS LETTERS

Origin of subgap states in amorphous In-Ga-Zn-O

(2013) Wolfgang Körner et al.   JOURNAL OF APPLIED PHYSICS

Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors

(2013) Hui-Xiong Deng et al.   PHYSICAL REVIEW B

Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors

(2012) Xiao-Ming Huang et al.   CHINESE PHYSICS LETTERS

Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

(2012) Ho-Hyun Nahm et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Analysis of electronic subgap states in amorphous semiconductor oxides based on the example of Zn-Sn-O systems

(2012) Wolfgang Körner et al.   PHYSICAL REVIEW B

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

(2011) Keisuke Ide et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

(2011) Sungsik Lee et al.   APPLIED PHYSICS LETTERS

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

(2011) Myung-Gil Kim et al.   NATURE MATERIALS

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Material characteristics and applications of transparent amorphous oxide semiconductors

(2010) Toshio Kamiya et al.   NPG Asia Materials

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide

(2009) Peter T. Erslev et al.   APPLIED PHYSICS LETTERS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Improvement in the Performance of Tin Oxide Thin-Film Transistors by Alumina Doping

(2009) Myung Soo Huh et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Trap densities in amorphous-InGaZnO4 thin-film transistors

(2008) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS

High mobility indium free amorphous oxide thin film transistors

(2008) Elvira M. C. Fortunato et al.   APPLIED PHYSICS LETTERS

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

(2008) Madambi K. Jayaraj et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Disorder and instability processes in amorphous conducting oxides

(2008) John Robertson   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS