Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Title
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 10, Pages 103509
Publisher
AIP Publishing
Online
2011-03-11
DOI
10.1063/1.3564882

Ask authors/readers for more resources

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started