Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
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Title
Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
Authors
Keywords
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Journal
Advanced Electronic Materials
Volume 1, Issue 7, Pages 1400006
Publisher
Wiley
Online
2015-05-09
DOI
10.1002/aelm.201400006
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- (2014) John Robertson et al. APPLIED PHYSICS LETTERS
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- (2010) Byungki Ryu et al. APPLIED PHYSICS LETTERS
- Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
- (2010) Himchan Oh et al. APPLIED PHYSICS LETTERS
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
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