The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors
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Title
The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors
Authors
Keywords
In-Ga-Zn-O (IGZO), Thin film transistor, Negative bias stress (NBS), Positive bias stress (PBS), Negative bias illumination stress (NBIS), Positive bias illumination stress (PBIS)
Journal
JOURNAL OF ELECTROCERAMICS
Volume 36, Issue 1-4, Pages 129-134
Publisher
Springer Nature
Online
2016-04-02
DOI
10.1007/s10832-016-0022-5
References
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Related references
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- (2008) Pedro Barquinha et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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