Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

(2014) John Robertson et al.   APPLIED PHYSICS LETTERS

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

Oxygen Dispersive Diffusion Induced Bias Stress Instability in Thin Active Layer Amorphous In–Ga–Zn–O Thin-Film Transistors

(2013) Jaewook Jeong et al.   Applied Physics Express

Cation disorder as the major electron scattering source in crystalline InGaZnO

(2013) Youngho Kang et al.   APPLIED PHYSICS LETTERS

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

(2013) Ken Watanabe et al.   APPLIED PHYSICS LETTERS

Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors

(2013) Suehye Park et al.   Journal of the Society for Information Display

Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

(2012) Sungsik Lee et al.   APPLIED PHYSICS LETTERS

Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

(2012) Ho-Hyun Nahm et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

(2011) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination

(2011) Jeong Hwan Kim et al.   APPLIED PHYSICS LETTERS

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

(2011) Keisuke Ide et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors

(2011) Wei-Tsung Chen et al.   IEEE ELECTRON DEVICE LETTERS

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

(2009) Jaeseob Lee et al.   APPLIED PHYSICS LETTERS

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

(2009) M. E. Lopes et al.   APPLIED PHYSICS LETTERS

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

(2009) Kwang-Hee Lee et al.   APPLIED PHYSICS LETTERS

Local structure and conduction mechanism in amorphous In–Ga–Zn–O films

(2009) Deok-Yong Cho et al.   APPLIED PHYSICS LETTERS

Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

First-principles study of native point defects in crystalline indium gallium zinc oxide

(2009) Hideyuki Omura et al.   JOURNAL OF APPLIED PHYSICS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Toward High-Performance Amorphous GIZO TFTs

(2009) P. Barquinha et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(2008) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS