Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

(2012) Zhong Qiang Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Size control of nanocrystals in InGaZnO4 thin films fabricated by using the sol-gel method

(2012) S. J. Seo et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Electroforming and endurance behavior of Al/Pr0.7Ca0.3MnO3/Pt devices

(2011) Zhaoliang Liao et al.   APPLIED PHYSICS LETTERS

Effect of the Ga Ratio on the Dielectric Function of Solution-processed InGaZnO Films

(2011) Tae Jung Kim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Bistable resistance memory switching effect in amorphous InGaZnO thin films

(2010) C. H. Kim et al.   APPLIED PHYSICS LETTERS

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

(2010) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

(2010) Yong-Hoon Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Solution-processed InGaZnO-based thin film transistors for printed electronics applications

(2009) Jun Hyung Lim et al.   APPLIED PHYSICS LETTERS

The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions

(2009) R. Yang et al.   APPLIED PHYSICS LETTERS

Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

(2009) Gun Hee Kim et al.   APPLIED PHYSICS LETTERS

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

(2009) Hu Young Jeong et al.   APPLIED PHYSICS LETTERS

Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

(2009) Tze-Ching Fung et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching of aluminum oxide for flexible memory

(2008) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications

(2008) Lee-Eun Yu et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE