Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

(2011) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

(2011) Keisuke Ide et al.   APPLIED PHYSICS LETTERS

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory

(2010) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS