Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors

Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

(2010) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals

(2010) S. J. Clark et al.   PHYSICAL REVIEW B

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

(2009) M. E. Lopes et al.   APPLIED PHYSICS LETTERS

Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors

(2009) Ken Hoshino et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors

(2009) Tze-Ching Fung et al.   Journal of Display Technology

Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)m

(2009) W.-J. Lee et al.   PHYSICA B-CONDENSED MATTER

Fundamentals of zinc oxide as a semiconductor

(2009) Anderson Janotti et al.   REPORTS ON PROGRESS IN PHYSICS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(2008) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS