Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor

(2017) A de Jamblinne de Meux et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Oxygen vacancies effects in a-IGZO: Formation mechanisms, hysteresis, and negative bias stress effects

(2017) Albert de Jamblinne de Meux et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

(2015) A de Jamblinne de Meux et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

(2015) Jang Yeon Kwon et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy

(2015) Sungsik Lee et al.   Scientific Reports

Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior

(2015) W. H. Han et al.   Physical Review Applied

Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors

(2015) Youngho Kang et al.   Advanced Electronic Materials

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

(2014) John Robertson et al.   APPLIED PHYSICS LETTERS

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

(2014) S. Sallis et al.   APPLIED PHYSICS LETTERS

An efficient method to generate amorphous structures based on local geometry

(2014) Yong Youn et al.   COMPUTATIONAL MATERIALS SCIENCE

Improved initial guess for minimum energy path calculations

(2014) Søren Smidstrup et al.   JOURNAL OF CHEMICAL PHYSICS

Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor

(2014) M. P. Hung et al.   ECS Solid State Letters

Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

(2013) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Origin of subgap states in amorphous In-Ga-Zn-O

(2013) Wolfgang Körner et al.   JOURNAL OF APPLIED PHYSICS

Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors

(2013) Hyeon-Kyun Noh et al.   JOURNAL OF APPLIED PHYSICS

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

(2013) Jae Kyeong Jeong   JOURNAL OF MATERIALS RESEARCH

cp2k: atomistic simulations of condensed matter systems

(2013) Jürg Hutter et al.   Wiley Interdisciplinary Reviews-Computational Molecular Science

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

(2012) Piero Migliorato et al.   APPLIED PHYSICS LETTERS

Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

(2012) Hyo Jin Kim et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

(2012) Ho-Hyun Nahm et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O

(2012) Kenji Nomura et al.   ECS Journal of Solid State Science and Technology

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

(2011) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Generalized inverse participation ratio as a possible measure of localization for interacting systems

(2011) N. C. Murphy et al.   PHYSICAL REVIEW B

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

(2011) Hyeon-Kyun Noh et al.   PHYSICAL REVIEW B

Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

(2011) Joon Seok Park et al.   THIN SOLID FILMS

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Auxiliary Density Matrix Methods for Hartree−Fock Exchange Calculations

(2010) Manuel Guidon et al.   Journal of Chemical Theory and Computation

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides

(2009) Aron Walsh et al.   CHEMISTRY OF MATERIALS

Robust Periodic Hartree−Fock Exchange for Large-Scale Simulations Using Gaussian Basis Sets

(2009) Manuel Guidon et al.   Journal of Chemical Theory and Computation

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE