Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

Published 2016 View Full Article

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Title
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 10, Pages 1268-1271
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-08-25
DOI
10.1109/led.2016.2600574

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