Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

Title
Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 50, Issue 2, Pages 02LT01
Publisher
IOP Publishing
Online
2016-11-28
DOI
10.1088/1361-6463/50/2/02lt01

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