Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Published 2012 View Full Article

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Title
Unipolar resistive switching phenomena in fully transparent SiN-based memory cells
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 12, Pages 125020
Publisher
IOP Publishing
Online
2012-11-12
DOI
10.1088/0268-1242/27/12/125020

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