Conductance quantization in oxygen-anion-migration-based resistive switching memory devices
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Title
Conductance quantization in oxygen-anion-migration-based resistive switching memory devices
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 4, Pages 043510
Publisher
AIP Publishing
Online
2013-07-26
DOI
10.1063/1.4816747
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