Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Tunable Electroluminescence in Planar Graphene/SiO2Memristors

(2013) Congli He et al.   ADVANCED MATERIALS

Effects of sidewall etching on electrical properties of SiOx resistive random access memory

(2013) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of Charge-Pumping Data for Identification of Dielectric Defects

(2013) Dmitry Veksler et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switching of SiO2 Thin Films

(2013) Y.-T. Chen et al.   ECS Solid State Letters

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

(2012) Yanzhen Wang et al.   APPLIED PHYSICS LETTERS

Study of polarity effect in SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films

(2012) Yen-Ting Chen et al.   IEEE ELECTRON DEVICE LETTERS

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

(2012) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in silicon suboxide films

(2012) Adnan Mehonic et al.   JOURNAL OF APPLIED PHYSICS

Electrically tailored resistance switching in silicon oxide

(2012) Adnan Mehonic et al.   NANOTECHNOLOGY

In situ imaging of the conducting filament in a silicon oxide resistive switch

(2012) Jun Yao et al.   Scientific Reports

Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

(2011) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State

(2010) Alessandro Calderoni et al.   IEEE ELECTRON DEVICE LETTERS

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3Thin Films for Low Cost Nonvolatile Memories

(2010) César Moreno et al.   NANO LETTERS

Resistive Switches and Memories from Silicon Oxide

(2010) Jun Yao et al.   NANO LETTERS

Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide–metal structure

(2010) Li-Wei Feng et al.   THIN SOLID FILMS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

(2008) Chanwoo Park et al.   APPLIED PHYSICS LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS