Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

All-Metal-Nitride RRAM Devices

(2015) Zhiping Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Physical and chemical mechanisms in oxide-based resistance random access memory

(2015) Kuan-Chang Chang et al.   Nanoscale Research Letters

Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps

(2014) Ling Li et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

(2014) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Metal Floating Gate Memory Device With SiO2/HfO2 Dual-Layer as Engineered Tunneling Barrier

(2014)   IEEE ELECTRON DEVICE LETTERS

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

(2014) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

(2014) Chi-Chou Lin et al.   JOURNAL OF APPLIED PHYSICS

Performance and characteristics of double layer porous silicon oxide resistance random access memory

(2013) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

(2013) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

(2013) Yu-Ting Su et al.   APPLIED PHYSICS LETTERS

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

(2013) Ching-Hui Hsu et al.   APPLIED PHYSICS LETTERS

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel

(2013) Hung-Bin Chen et al.   IEEE ELECTRON DEVICE LETTERS

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

(2013) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Performance Comparison Between Bulk and SOI Junctionless Transistors

(2013) Ming-Hung Han et al.   IEEE ELECTRON DEVICE LETTERS

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

(2013) Haitao Sun et al.   IEEE ELECTRON DEVICE LETTERS

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

(2013) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   JOURNAL OF SUPERCRITICAL FLUIDS

ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application

(2012) Chi-Hsin Huang et al.   ACS Nano

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

(2012) Tsung-Ming Tsai et al.   APPLIED PHYSICS LETTERS

Silicon introduced effect on resistive switching characteristics of WOX thin films

(2012) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device

(2012) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

(2011) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

(2011) Sheng-Yao Huang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

The Effect of Silicon Oxide Based RRAM with Tin Doping

(2011) Kuan-Chang Chang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

(2011) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films

(2011) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Developments in nanocrystal memory

(2011) Ting-Chang Chang et al.   Materials Today

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

(2010) Chih-Tsung Tsai et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Influence of H[sub 2]O Dipole on Subthreshold Swing of Amorphous Indium–Gallium–Zinc-Oxide Thin Film Transistors

(2010) Wan-Fang Chung et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS