Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering

1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays

(2015) Chiyui Ahn et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

(2014) H. Z. Zhang et al.   APPLIED PHYSICS LETTERS

Materials selection for oxide-based resistive random access memories

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture

(2014) Frederick T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Oxygen vacancy effects on an amorphous-TaOx-based resistance switch: a first principles study

(2014) Bo Xiao et al.   Nanoscale

3D integration of planar crossbar memristive devices with CMOS substrate

(2014) Peng Lin et al.   NANOTECHNOLOGY

Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

(2014) Yue Bai et al.   Scientific Reports

High-Performance and Low-Power Rewritable SiOx1 kbit One Diode-One Resistor Crossbar Memory Array

(2013) Gunuk Wang et al.   ADVANCED MATERIALS

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory

(2013) Hong-Yu Chen et al.   NANOTECHNOLOGY

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

ZnO-based one diode-one resistor device structure for crossbar memory applications

(2012) Zi-Jheng Liu et al.   APPLIED PHYSICS LETTERS

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Three-Dimensional Integration of Organic Resistive Memory Devices

(2010) Sunghoon Song et al.   ADVANCED MATERIALS

Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric

(2010) L. Wu et al.   APPLIED PHYSICS LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications

(2009) Tae-Wook Kim et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electrical transport and thermometry of electroformed titanium dioxide memristive switches

(2009) Julien Borghetti et al.   JOURNAL OF APPLIED PHYSICS